Influence of the GaAs substrate orientation on the composition of GaxIn1-xP (x ≃ 0.5) grown by LPE and MOCVD
Identifieur interne : 000204 ( Russie/Analysis ); précédent : 000203; suivant : 000205Influence of the GaAs substrate orientation on the composition of GaxIn1-xP (x ≃ 0.5) grown by LPE and MOCVD
Auteurs : RBID : Pascal:08-0534132Descripteurs français
- Pascal (Inist)
- Epitaxie phase liquide, Méthode MOCVD, Ségrégation, Système ternaire, Composition phase, Mécanisme croissance, Surfusion, Evaporation, Phosphore, Transformation phase, Condition opératoire, Photoluminescence, Spectrométrie SIMS, Couche épitaxique, Phosphure de gallium, Phosphure d'indium, Gallium, Solidification, Semiconducteur III-V, Substrat GaAs, GaxIn1-xP, GaInP, 8115L, 8115G, 6855N, 6855A.
- Wicri :
- concept : Phosphore.
English descriptors
- KwdEn :
- Epitaxial layers, Evaporation, Gallium, Gallium phosphide, Growth mechanism, III-V semiconductors, Indium phosphide, LPE, MOCVD, Operating conditions, Phase composition, Phase transformations, Phosphorus, Photoluminescence, Secondary ion mass spectrometry, Segregation, Solidification, Supercooling, Ternary systems.
Abstract
It has been shown that the segregation coefficients in III-V ternary systems depend on substrate orientation. This effect was observed, in particular, in the system GaInP grown on GaAs substrates by LPE. All articles studying this effect were based on results obtained growing on substrates with different orientations. In these studies the liquid phase composition was changed in each experiment. Analyses of their growth methodology show that important parameters such as the initial supercooling and liquidus temperature can differ from one experiment to another. These uncontrolled growth parameters introduce, naturally, some uncertainty on the results. Moreover the evaporation of phosphorus from the liquid phase can change its composition and this could be a reason of another experimental error. All these errors can lead to different conclusions and even some authors do not observe any effect of the substrate orientation at all. In this work, to eliminate these uncertainties, we have grown simultaneously GaInP on GaAs substrates with different orientations but from the same liquid phase. In this way we are sure that the growth conditions are the same for different substrates even if the liquidus temperature and supercooling are not exactly known. The samples obtained were studied by HRXRD, photoluminescence and SIMS. It was found that the Ga concentration in the epitaxial layers depends on substrate orientation. Additionally, analogue experiments were done by MOCVD using as substrates GaAs (100), (111)A and (111)B growing the GaInP simultaneously during the same growth experiment. The results were very similar to those obtained by LPE.
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Pascal:08-0534132Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Influence of the GaAs substrate orientation on the composition of Ga<sub>x</sub>In<sub>1-x</sub>P (x ≃ 0.5) grown by LPE and MOCVD</title><author><name sortKey="Mishurnyi, V A" uniqKey="Mishurnyi V">V. A. Mishurnyi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IICO-UASLP, Av. Karakorum 1470, Lomas 4 a Secc</s1><s2>San Luis Potosi, S.L.P., C.P. 78210</s2><s3>MEX</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Mexique</country><wicri:noRegion>San Luis Potosi, S.L.P., C.P. 78210</wicri:noRegion></affiliation></author><author><name sortKey="De Anda, F" uniqKey="De Anda F">F. De Anda</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IICO-UASLP, Av. Karakorum 1470, Lomas 4 a Secc</s1><s2>San Luis Potosi, S.L.P., C.P. 78210</s2><s3>MEX</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Mexique</country><wicri:noRegion>San Luis Potosi, S.L.P., C.P. 78210</wicri:noRegion></affiliation></author><author><name sortKey="Gorbatchev, A Yu" uniqKey="Gorbatchev A">A. Yu. Gorbatchev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IICO-UASLP, Av. Karakorum 1470, Lomas 4 a Secc</s1><s2>San Luis Potosi, S.L.P., C.P. 78210</s2><s3>MEX</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Mexique</country><wicri:noRegion>San Luis Potosi, S.L.P., C.P. 78210</wicri:noRegion></affiliation></author><author><name sortKey="Kudriavtsev, Yu" uniqKey="Kudriavtsev Y">Yu. Kudriavtsev</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>CINVESTAV-IPN, Av. IPN 2508</s1><s2>Col. San Pedro Zacatenco, D.F.C.P. 07360</s2><s3>MEX</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Mexique</country><wicri:noRegion>Col. San Pedro Zacatenco, D.F.C.P. 07360</wicri:noRegion></affiliation></author><author><name sortKey="Elyukhin, V A" uniqKey="Elyukhin V">V. A. Elyukhin</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>CINVESTAV-IPN, Av. IPN 2508</s1><s2>Col. San Pedro Zacatenco, D.F.C.P. 07360</s2><s3>MEX</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Mexique</country><wicri:noRegion>Col. San Pedro Zacatenco, D.F.C.P. 07360</wicri:noRegion></affiliation></author><author><name sortKey="Prutskij, T" uniqKey="Prutskij T">T. Prutskij</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>ICUAP-BUAP, Apartado Postal 207</s1><s2>72000 Puebla, Pue</s2><s3>MEX</s3><sZ>6 aut.</sZ></inist:fA14><country>Mexique</country><wicri:noRegion>72000 Puebla, Pue</wicri:noRegion></affiliation></author><author><name sortKey="Pelosi, C" uniqKey="Pelosi C">C. Pelosi</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>IMEM/CNR, Parco Area delle Scienze 37/A</s1><s2>43010, Parma</s2><s3>ITA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Italie</country><wicri:noRegion>43010, Parma</wicri:noRegion></affiliation></author><author><name sortKey="Bocchi, C" uniqKey="Bocchi C">C. Bocchi</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>IMEM/CNR, Parco Area delle Scienze 37/A</s1><s2>43010, Parma</s2><s3>ITA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Italie</country><wicri:noRegion>43010, Parma</wicri:noRegion></affiliation></author><author><name sortKey="Ber, B Y" uniqKey="Ber B">B. Y. Ber</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>A.F.Ioffe Physico-Technical Institute, Russian Academy of Science, Politechnicheskaya St. 26</s1><s2>194021 St. Petersburg</s2><s3>RUS</s3><sZ>9 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>194021 St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Ortiz Vazquez, F E" uniqKey="Ortiz Vazquez F">F. E. Ortiz Vazquez</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IICO-UASLP, Av. Karakorum 1470, Lomas 4 a Secc</s1><s2>San Luis Potosi, S.L.P., C.P. 78210</s2><s3>MEX</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Mexique</country><wicri:noRegion>San Luis Potosi, S.L.P., C.P. 78210</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">08-0534132</idno><date when="2008">2008</date><idno type="stanalyst">PASCAL 08-0534132 INIST</idno><idno type="RBID">Pascal:08-0534132</idno><idno type="wicri:Area/Main/Corpus">005F69</idno><idno type="wicri:Area/Main/Repository">006447</idno><idno type="wicri:Area/Russie/Extraction">000204</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Epitaxial layers</term><term>Evaporation</term><term>Gallium</term><term>Gallium phosphide</term><term>Growth mechanism</term><term>III-V semiconductors</term><term>Indium phosphide</term><term>LPE</term><term>MOCVD</term><term>Operating conditions</term><term>Phase composition</term><term>Phase transformations</term><term>Phosphorus</term><term>Photoluminescence</term><term>Secondary ion mass spectrometry</term><term>Segregation</term><term>Solidification</term><term>Supercooling</term><term>Ternary systems</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Epitaxie phase liquide</term><term>Méthode MOCVD</term><term>Ségrégation</term><term>Système ternaire</term><term>Composition phase</term><term>Mécanisme croissance</term><term>Surfusion</term><term>Evaporation</term><term>Phosphore</term><term>Transformation phase</term><term>Condition opératoire</term><term>Photoluminescence</term><term>Spectrométrie SIMS</term><term>Couche épitaxique</term><term>Phosphure de gallium</term><term>Phosphure d'indium</term><term>Gallium</term><term>Solidification</term><term>Semiconducteur III-V</term><term>Substrat GaAs</term><term>GaxIn1-xP</term><term>GaInP</term><term>8115L</term><term>8115G</term><term>6855N</term><term>6855A</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Phosphore</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">It has been shown that the segregation coefficients in III-V ternary systems depend on substrate orientation. This effect was observed, in particular, in the system GaInP grown on GaAs substrates by LPE. All articles studying this effect were based on results obtained growing on substrates with different orientations. In these studies the liquid phase composition was changed in each experiment. Analyses of their growth methodology show that important parameters such as the initial supercooling and liquidus temperature can differ from one experiment to another. These uncontrolled growth parameters introduce, naturally, some uncertainty on the results. Moreover the evaporation of phosphorus from the liquid phase can change its composition and this could be a reason of another experimental error. All these errors can lead to different conclusions and even some authors do not observe any effect of the substrate orientation at all. In this work, to eliminate these uncertainties, we have grown simultaneously GaInP on GaAs substrates with different orientations but from the same liquid phase. In this way we are sure that the growth conditions are the same for different substrates even if the liquidus temperature and supercooling are not exactly known. The samples obtained were studied by HRXRD, photoluminescence and SIMS. It was found that the Ga concentration in the epitaxial layers depends on substrate orientation. Additionally, analogue experiments were done by MOCVD using as substrates GaAs (100), (111)A and (111)B growing the GaInP simultaneously during the same growth experiment. The results were very similar to those obtained by LPE.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>516</s2></fA05><fA06><s2>22</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Influence of the GaAs substrate orientation on the composition of Ga<sub>x</sub>In<sub>1-x</sub>P (x ≃ 0.5) grown by LPE and MOCVD</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the EMRS 2007 Fall Meeting Symposium H: Current Trends in Optical and X-Ray Metrology of Advanced Materials and Devices II, Warsaw, Poland</s1></fA09><fA11 i1="01" i2="1"><s1>MISHURNYI (V. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>DE ANDA (F.)</s1></fA11><fA11 i1="03" i2="1"><s1>GORBATCHEV (A. Yu.)</s1></fA11><fA11 i1="04" i2="1"><s1>KUDRIAVTSEV (Yu.)</s1></fA11><fA11 i1="05" i2="1"><s1>ELYUKHIN (V. A.)</s1></fA11><fA11 i1="06" i2="1"><s1>PRUTSKIJ (T.)</s1></fA11><fA11 i1="07" i2="1"><s1>PELOSI (C.)</s1></fA11><fA11 i1="08" i2="1"><s1>BOCCHI (C.)</s1></fA11><fA11 i1="09" i2="1"><s1>BER (B. Y.)</s1></fA11><fA11 i1="10" i2="1"><s1>ORTIZ VAZQUEZ (F. E.)</s1></fA11><fA12 i1="01" i2="1"><s1>SERVET (Bernard)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>TOMOZEIU (Nicolae)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>IICO-UASLP, Av. Karakorum 1470, Lomas 4 a Secc</s1><s2>San Luis Potosi, S.L.P., C.P. 78210</s2><s3>MEX</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="02"><s1>CINVESTAV-IPN, Av. IPN 2508</s1><s2>Col. San Pedro Zacatenco, D.F.C.P. 07360</s2><s3>MEX</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>ICUAP-BUAP, Apartado Postal 207</s1><s2>72000 Puebla, Pue</s2><s3>MEX</s3><sZ>6 aut.</sZ></fA14><fA14 i1="04"><s1>IMEM/CNR, Parco Area delle Scienze 37/A</s1><s2>43010, Parma</s2><s3>ITA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="05"><s1>A.F.Ioffe Physico-Technical Institute, Russian Academy of Science, Politechnicheskaya St. 26</s1><s2>194021 St. Petersburg</s2><s3>RUS</s3><sZ>9 aut.</sZ></fA14><fA20><s1>8092-8095</s1></fA20><fA21><s1>2008</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000185320110210</s5></fA43><fA44><s0>0000</s0><s1>© 2008 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>14 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>08-0534132</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>CHE</s0></fA66><fC01 i1="01" l="ENG"><s0>It has been shown that the segregation coefficients in III-V ternary systems depend on substrate orientation. This effect was observed, in particular, in the system GaInP grown on GaAs substrates by LPE. All articles studying this effect were based on results obtained growing on substrates with different orientations. In these studies the liquid phase composition was changed in each experiment. Analyses of their growth methodology show that important parameters such as the initial supercooling and liquidus temperature can differ from one experiment to another. These uncontrolled growth parameters introduce, naturally, some uncertainty on the results. Moreover the evaporation of phosphorus from the liquid phase can change its composition and this could be a reason of another experimental error. All these errors can lead to different conclusions and even some authors do not observe any effect of the substrate orientation at all. In this work, to eliminate these uncertainties, we have grown simultaneously GaInP on GaAs substrates with different orientations but from the same liquid phase. In this way we are sure that the growth conditions are the same for different substrates even if the liquidus temperature and supercooling are not exactly known. The samples obtained were studied by HRXRD, photoluminescence and SIMS. It was found that the Ga concentration in the epitaxial layers depends on substrate orientation. Additionally, analogue experiments were done by MOCVD using as substrates GaAs (100), (111)A and (111)B growing the GaInP simultaneously during the same growth experiment. The results were very similar to those obtained by LPE.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15L</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15G</s0></fC02><fC02 i1="03" i2="3"><s0>001B60H55N</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A15A</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Epitaxie phase liquide</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>LPE</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Méthode MOCVD</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>MOCVD</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Ségrégation</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Segregation</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Système ternaire</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Ternary systems</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Composition phase</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Phase composition</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Composición fase</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Surfusion</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Supercooling</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Evaporation</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Evaporation</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Phosphore</s0><s2>NC</s2><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Phosphorus</s0><s2>NC</s2><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Transformation phase</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Phase transformations</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Condition opératoire</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Operating conditions</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Condición operatoria</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Spectrométrie SIMS</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Secondary ion mass spectrometry</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Espectrometría SIMS</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Couche épitaxique</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Epitaxial layers</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Phosphure de gallium</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Gallium phosphide</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Galio fosfuro</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Phosphure d'indium</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Indium phosphide</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Indio fosfuro</s0><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Gallium</s0><s2>NC</s2><s5>17</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Gallium</s0><s2>NC</s2><s5>17</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Solidification</s0><s5>29</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Solidification</s0><s5>29</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>30</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>30</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Substrat GaAs</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>GaxIn1-xP</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>GaInP</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>8115L</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>8115G</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>6855N</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>6855A</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>350</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>Current Trends in Optical and X-Ray Metrology of Advanced Materials and Devices II. Symposium H</s1><s3>Warsaw POL</s3><s4>2007-09-17</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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